2016/05/17 by Fang Liu, S Prucnal, R Hübner +4
Engineering · Materials Science · Physics and Astronomy · #Advanced Surface Polishing Techniques #Annealing (glass) #Doping #Epitaxy #Ion implantation #Silicon #Silicon Nanostructures and Photoluminescence #Silicon and Solar Cell Technologies #Supercooling #Titanium #Transmission electron microscopy #cond-mat.mtrl-sci
paper · pdf · doi:10.1088/0022-3727/49/24/245104
published as J. Phys. D: Appl. Phys. 49, 245104 (2016) · 10 pages, 4 figures
openalex publication_date 2016/05/17 · openalex created_date 2016/06/24 · arxiv created 2016/08/19 · arxiv updated 2016/08/22 · openalex updated_date 2026/08/06
Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy and solid phase epitaxy, respectively. Cross-sectional transmission electron microscopy of Ti-implanted Si after liquid phase epitaxy shows the so-called growth interface breakdown or cellular breakdown owing to the occurrence of constitutional supercooling in the melt. The appearance of cellular breakdown prevents further recrystallization. However, the out-diffusion and cellular breakdown can be effectively suppressed by solid phase epitaxy during flash lamp annealing due to the high velocity of amorphous-crystalline interface and the low diffusion velocity for Ti in the solid phase.