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Resonant Tunneling and Intrinsic Bistability in Twisted Graphene Structures

2015/06/30 by Joaquin F. Rodriguez-Nieva, Mildred S. Dresselhaus, Leonid S. Levitov · 1 citation
Physics and Astronomy · #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.94.085412

published as Phys. Rev. B 94, 085412 (2016) · 7 pages, 4 figures

arxiv created 2016/08/12 · arxiv updated 2016/08/19

Abstract

We predict that vertical transport in heterostructures formed by twisted graphene layers can exhibit a unique bistability mechanism. Intrinsically bistable I-V characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling regime. We consider a simple trilayer architecture, with the outer layers acting as the source and drain and the middle layer floating. Under bias, the middle layer can be either resonant or non-resonant with the source and drain layers. The bistability is controlled by geometric device parameters easily tunable in experiments. The nanoscale architecture can enable uniquely fast switching times.

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