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Hole Fermi surface inBi2Se3probed by quantum oscillations

2016/03/08 by B. A. Piot, W. Desrat, D. K. Maude +5
Materials Science · Physics and Astronomy · #Advanced Thermoelectric Materials and Devices #Condensed matter physics #Fermi surface #Physics #Quantum many-body systems #Quantum mechanics #Topological Materials and Phenomena #Valence (chemistry) #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.93.155206

A supplemental material file giving a more detailed description of our work is available upon request

arxiv created 2016/03/08 · openalex publication_date 2016/04/27 · arxiv updated 2016/05/25 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/06

Abstract

Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) Bi2Se3 crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen quantum oscillations enables us to determine the Fermi surface of the bulk valence band states as a function of the carrier density. At low density, the angular dependence exhibits a downturn in the oscillations frequency between 0^\ensuremath∘ and 90^\ensuremath∘, reflecting a bag-shaped hole Fermi surface. The detection of a single frequency for all tilt angles rules out the existence of a Fermi surface with different extremal cross sections down to 24 meV. There is therefore no signature of a camelback in the valence band of our bulk samples, in accordance with the direct band gap predicted by GW calculations.

Citations