2015/12/23 by A. Yu. Kuntsevich, A. V. Shupltetsov, A. V. Shupletsov +1 · 6 citations
Engineering · Mathematics · Physics and Astronomy · #Condensed matter physics #Electrical resistivity and conductivity #Field (mathematics) #Geometry #Hall effect #Magnetic Field Sensors Techniques #Magnetic field #Magnetic properties of thin films #Magnetoresistance #Materials science #Mathematics #Nonlinear system #Perpendicular #Physics #Quantum and electron transport phenomena #Quantum mechanics #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.93.205407
published in Physical review. B./Physical review. B 93(20) (American Physical Society) · 4 pages, 7 figures
arxiv created 2015/12/23 · openalex publication_date 2016/05/05 · arxiv updated 2016/05/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
By measuring magnetoresistance and the Hall effect in a classically moderate perpendicular magnetic field in a Si-MOSFET-type macroscopic antidot array, we found a nonlinear with field, temperature- and density-dependent Hall resistivity. We argue that this nonlinearity originates from low mobility shells of the antidots with a strong temperature dependence of the resistivity and suggest a qualitative explanation of the phenomenon.