2016/03/07 by Céline Barreteau, B. Michon, Baptiste Michon +3 · 168 citations
Chemistry · Materials Science · Physics and Astronomy · #2D Materials and Applications #Chemistry #Condensed matter physics #Crystallite #Electrical resistivity and conductivity #Ga2O3 and related materials #Germanium #Graphene research and applications #Materials science #Metallurgy #Mineralogy #Optics #Optoelectronics #Raman spectroscopy #Semiconductor #Semiconductor materials #Silicon #cond-mat.mtrl-sci
paper · pdf · doi:10.1016/j.jcrysgro.2016.03.019
published in Journal of Crystal Growth 443, 75-80 (Elsevier BV) · Accepted for publication 6 pages, 6 figures
arxiv created 2016/03/07 · openalex publication_date 2016/03/15 · arxiv updated 2016/04/20 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of 2D layered semiconductors. We have succeeded in growing bulk single crystals of these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil hot press. Large (mm-size), shiny, micaceous crystals of GeP, GeAs and SiAs were obtained, and could be exfoliated into 2D flakes. Small and brittle crystals of SiP were yielded by this method. High-pressure sintered polycrystalline SiP and GeAs have also been successfully used as a precursor in the Chemical Vapor Transport growth of these crystals in the presence of I2 as a transport agent. All compounds are found to crystallize in the expected layered structure and do not undergo any structural transition at low temperature, as shown by Raman spectroscopy down to T=5K. All materials exhibit a semiconducting behavior. The electrical resistivity of GeP, GeAs and SiAs is found to depend on temperature following a 2D-Variable Range Hopping conduction mechanism. The availability of bulk crystals of these compounds opens new perspectives in the field of 2D semiconducting materials for device applications.