2018/09/19 by Ruth A. Miller, Hongyun So, Miller, Ruth A. +5
Materials Science · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ga2O3 and related materials #GaN-based semiconductor devices and materials #ZnO doping and properties
paper · pdf · doi:10.48550/arxiv.1809.07396
openalex publication_date 2018/09/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Wide bandgap semiconductors have become the most attractive materials in optoelectronics in the last decade. Their wide bandgap and intrinsic properties have advanced the development of reliable photodetectors to selectively detect short wavelengths (i.e., ultraviolet, UV) in high temperature regions (up to 300°C). The main driver for the development of high-temperature UV detection instrumentation is in-situ monitoring of hostile environments and processes found within industrial, automotive, aerospace, and energy production systems that emit UV signatures. In this review, a summary of the optical performance (in terms of photocurrent-to-dark current ratio, responsivity, quantum efficiency, and response time) and uncooled, high-temperature characterization of III-nitride, SiC, and other wide bandgap semiconductor UV photodetectors is presented.