2011/07/18 by Moritz Brendel, Andreas Kruse, H. Jönen +4 · 1 citation
Physics and Astronomy · Engineering · #GaN-based semiconductor devices and materials #Semiconductor Quantum Structures and Devices #Nanowire Synthesis and Applications
paper · doi:10.1063/1.3614557
openalex publication_date 2011/07/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/06/26
Nonradiative loss processes are a major concern in nitride-based light emitting devices. Utilizing optical gain measurements on GaInN/GaN/AlGaN laser structures, we have studied the dependence of the total recombination rate on excess carrier density, up to rather high densities. From a detailed quantitative analysis, we find a room-temperature Auger recombination coefficient of 1.8 ± 0.2 × 10−31 cm6/s in the bandgap range 2.5 − 3.1 eV, considerably lower than previous experimental estimates. Thus, Auger recombination is expected to be significant for laser diodes, while it is not likely to be a major factor for the droop observed in light-emitting diodes.