Effect of photons on atoms in crystallization of amorphous silicon films

2017/01/13 by Nuofu Chen, Chen, NuoFu, Quanli Tao +7
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Photonic Crystals and Applications #Silicon Nanostructures and Photoluminescence #Thin-Film Transistor Technologies

paper · pdf · doi:10.48550/arxiv.1701.03581

openalex publication_date 2017/01/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The preferentially (220) orientated polycrystalline silicon films have been fabricated by performing photon-involved rapid thermal annealing upon amorphous silicon films. In contrast, conventional thermal annealing of the silicon amorphous films results in the preference of (111) orientated crystallization. This difference reveals the overlooked impaction of photons upon silicon atoms, which results in the preferential orientation of lattice plans with the smallest density of atoms on their projection plane rather than the lowest energies.

Related

• The formation of well-defined crystalline structures by UV laser irradiation of amorphous silicon films
• Avalanche effects in solid-phase epitaxial crystallization induced by light-ion irradiation
• On the Structural and Optical Properties of Sputtered Hydrogenated Amorphous Silicon Thin Films
• Femtosecond Laser Crystallization of Ultrathin a-Ge Films in Multilayer Stacks with Silicon Layers
• Enhanced Multiple Exciton Generation in Amorphous Silicon Nanoparticles