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Anisotropic magnetoresistance of charge-density wave ino−TaS3

2014/07/31 by Katsuhiko Inagaki, Toru Matsuura, Masakatsu Tsubota +3 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Anisotropy #Condensed matter physics #Electronic and Structural Properties of Oxides #Magnetic field #Magnetoresistance #Molecular Junctions and Nanostructures #Organic and Molecular Conductors Research #Physics #Quantum mechanics #Quantum tunnelling #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.93.075423

published as Phys. Rev. B 93, 075423 (2016) · 12 pages, 4 figures

arxiv created 2016/01/08 · openalex publication_date 2016/02/16 · arxiv updated 2016/03/02 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We report the magnetoresistance of a charge-density wave (CDW) in o\ensuremath-TaS3 whiskers at 4.2 K under a magnetic field up to 5.2 T. An anisotropic negative magnetoresistance was found in the nonlinear regime of current-voltage characteristics. The angle dependence of the magnetoresistance, studied by rotating the magnetic field upon the c axis, exhibited a twofold symmetry. The magnetoresistance amplitude exhibited maxima when the field was parallel to the a axis, whereas it vanished to the b axis. The observed anisotropy may come from a difference in interchain coupling of adjacent CDWs along the a and b axes. Comparison of the anisotropy to the scanning tunneling microscope image of CDWs allows us to provide a simple picture to explain the magnetoresistance in terms of delocalization of quantum interference of CDWs extending over the b\ensuremath-c plane.

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