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Ballistic transport exceeding 28 μm in CVD grown graphene

2015/11/30 by Luca Banszerus, Michael Schmitz, Stephan Engels +5 · 1 citation
Physics and Astronomy · #cond-mat.mes-hall

paper · pdf · doi:10.1021/acs.nanolett.5b04840

published as Nano Lett. 16, 1387 (2016) · 13 pages, 3 figures

arxiv created 2016/01/12 · arxiv updated 2016/02/24

Abstract

We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm2/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.

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