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Observation of π Berry phase in quantum oscillations of three‐dimensional Fermi surface in topological insulator Bi2Se3

2015/04/30 by Devendra Kumar, Archana Lakhani · 35 citations
Materials Science · Physics and Astronomy · #Dirac (video compression format) #Dirac fermion #Electrical resistivity and conductivity #Fermi surface #Fermion #Geometric phase #Graphene research and applications #Phase (matter) #Quantum #Quantum and electron transport phenomena #Quantum oscillations #Topological Materials and Phenomena #Topological insulator #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1002/pssr.201510260

published in physica status solidi (RRL) - Rapid Research Letters 9(11), 636-640 (Wiley) · 5 pages, 6 figures, This work has been presented at 8th India Singapore Symposium in Condensed Matter Physics Feb 25-Feb 27, 2015 at Indian Institute of Technology, Kanpur, India

arxiv created 2015/04/30 · openalex publication_date 2015/10/06 · arxiv updated 2016/01/11 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We report the quantum transport studies on Bi 2 Se 3 single crystal with bulk carrier concentration of ∼10 19 cm –3 . The Bi 2 Se 3 crystal exhibits metallic character, and at low temperatures, the field dependence of resistivity shows clear Shubnikov–de Haas (SdH) oscillations above 6 T. The analysis of these oscillations through Lifshitz–Kosevich theory reveals a non‐trivial π Berry phase coming from three‐dimensional (3D) Fermi surface, which is a strong signature of Dirac fermions with three‐dimensional dispersion. The large Dingle temperature and non zero slope of Williamson–Hall plot suggest the presence of enhanced local strain field in our system which possibly transforms the regions of topological insulator to 3D Dirac fermion metal state. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

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