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Compression of nanowires using a flat indenter: Elasticity measurement in nanoscale

2011/02/10 by Zhao Wang, Wang, Zhao, William Mook +9
Engineering · Physics and Astronomy · #Advanced Surface Polishing Techniques #FOS: Physical sciences #Force Microscopy Techniques and Applications #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Metal and Thin Film Mechanics #Other Condensed Matter (cond-mat.other)

paper · pdf · doi:10.48550/arxiv.1102.2135

openalex publication_date 2011/02/10 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

A new experimental approach for the characterization of the lateral elastic modulus of individual nanowires is demonstrated by implementing a micro/nano scale diametrical compression test geometry, using a flat punch indenter inside of a scanning electron microscope (SEM). A 250 nm diameter single crystal silicon nanowire is tested. Since silicon is highly anisotropic, the compression axis of the wire was determined by electron backscatter diffraction (EBSD). A two dimensional analytical closed-form solution based on a Hertz model is presented. The results of the analytical model are compared with those of finite-element simulations and to the experimental diametral compression results and show good agreement.

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