2015/08/19 by A. M. Kamerbeek, Petra Högl, P. Högl +3 · 21 citations
Materials Science · Mathematics · Physics and Astronomy · #Advanced Condensed Matter Physics #Condensed matter physics #Electric field #Electronic and Structural Properties of Oxides #Field (mathematics) #Magnetic and transport properties of perovskites and related materials #Materials science #Mathematics #Optoelectronics #Physics #Quantum mechanics #Semiconductor #Spin (aerodynamics) #Spintronics #Thermodynamics #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevlett.115.136601
published in Physical Review Letters 115(13), 136601 (American Physical Society) · 5 pages, 4 figures
arxiv created 2015/08/19 · openalex publication_date 2015/09/24 · arxiv updated 2015/10/28 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We show electric field control of the spin accumulation at the interface of the oxide semiconductor Nb\text\ensuremath-SrTiO3 with Co/AlOx spin injection contacts at room temperature. The in-plane spin lifetime \ensuremathτ_\ensuremath∥, as well as the ratio of the out-of-plane to in-plane spin lifetime \ensuremathτ_\ensuremath⊥/\ensuremathτ_\ensuremath∥, is manipulated by the built-in electric field at the semiconductor surface, without any additional gate contact. The origin of this manipulation is attributed to Rashba spin orbit fields (SOFs) at the Nb\text\ensuremath-SrTiO3 surface and shown to be consistent with theoretical model calculations based on SOF spin flip scattering. Additionally, the junction can be set in a high or low resistance state, leading to a nonvolatile control of \ensuremathτ_\ensuremath⊥/\ensuremathτ_\ensuremath∥, consistent with the manipulation of the Rashba SOF strength. Such room temperature electric field control over the spin state is essential for developing energy-efficient spintronic devices and shows promise for complex oxide based (spin) electronics.