2015/06/01 by Atanu Patra, Jaya Kumar Panda, Anushree Roy +4
Engineering · Materials Science · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Diffraction #Electronic and Structural Properties of Oxides #Lattice (music) #Materials science #Nanowire #Nanowire Synthesis and Applications #Optics #Optoelectronics #Phonon #Physics #Raman spectroscopy #Strain (injury) #Transverse plane #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.4929979
14 pages, 5 figures
arxiv created 2015/06/01 · openalex publication_date 2015/08/31 · arxiv updated 2015/09/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the transverse optical phonon mode along the axis of these nanowires. We attribute the observed shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.