Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility Three-Dimensional Dirac SemimetalCd3As2

2014/12/17 by Yanfei Zhao, Haiwen Liu, Chenglong Zhang +13 · 129 citations
Materials Science · Physics and Astronomy · #2D Materials and Applications #Anisotropy #Crystal (programming language) #Dirac (video compression format) #Electrical resistivity and conductivity #Fermi Gamma-ray Space Telescope #Fermi surface #Graphene research and applications #Limit (mathematics) #Quantum limit #Topological Materials and Phenomena #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevx.5.031037

published in Physical Review X 5(3) (American Physical Society)

arxiv created 2014/12/17 · openalex publication_date 2015/09/16 · arxiv updated 2015/09/23 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/06

Abstract

Analyzing changes in resistivity is one component of condensed-matter physics research that has applications in the electronics industry. Now, researchers experimentally show that the resistivity of a Cd₃As₂ crystal can be modulated by the geometry of the material's Fermi surface.

Citations

• Topological insulators and superconductors
• Landau quantization and quasiparticle interference in the three-dimensional Dirac semimetal Cd3As2
• Observation of a three-dimensional topological Dirac semimetal phase in high-mobility Cd3As2
• A stable three-dimensional topological Dirac semimetal Cd3As2
• Topological Insulators
• Breakdown of three-dimensional Dirac semimetal state in pressurizedCd3As2

Cited by

• High-mobility carriers induced by chemical doping in the candidate nodal-line semimetal CaAgP
• Separation of electron and hole dynamics in the semimetal LaSb
• Origin of the extremely large magnetoresistance in the semimetal YSb