2015/04/09 by J. Milton Pereira, J. M. Pereira Jr., M. I. Katsnelson · 1 citation
Chemistry · Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Band gap #Bilayer #Chemistry #Condensed matter physics #Graphene research and applications #Landau quantization #Layer (electronics) #Materials science #Nanotechnology #Perovskite Materials and Applications #Phosphorene #Physics #Quantum mechanics #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.92.075437
published as Phys. Rev. B 92, 075437 (2015) · 9 pages, 7 figures
arxiv created 2015/04/09 · openalex publication_date 2015/08/24 · arxiv updated 2015/09/02 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/06
In this work we introduce a low-energy Hamiltonian for single-layer and bilayer black phosphorus that describes the electronic states at the vicinity of the \mathrm\ensuremathΓ point. The model is based on a recently proposed tight-binding description for electron and hole bands close to the Fermi level. We calculate expressions for the Landau-level spectrum as function of magnetic field, and in the case of bilayer black phosphorus we investigate the effect of an external bias on the electronic band gap. The results showcase the highly anisotropic character of black phosphorus, and in particular for bilayer BP, the presence of bias allows for a field-induced semiconductor-metal transition.