2015/05/09 by Maria O'Brien, Niall McEvoy, Damien Hanlon +4
Materials Science · Physics and Astronomy · #2D Materials and Applications #Analytical Chemistry (journal) #Chemical and Physical Properties of Materials #Chemical vapor deposition #Fabrication #Graphene research and applications #Layer (electronics) #Monolayer #Raman spectroscopy #Transition metal #Wavenumber #cond-mat.mtrl-sci
paper · pdf · doi:10.1002/pssb.201552225
arxiv created 2015/05/09 · openalex publication_date 2015/08/17 · arxiv updated 2015/08/18 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Transition metal dichalcogenides (TMDs) have recently attracted attention due to their interesting electronic and optical properties. Fabrication of these materials in a reliable and facile method is important for future applications, as are methods to characterize material quality. Here we present the chemical vapor deposition of MoSe2 monolayer and few layer crystals. These results show the practicality of using chemical vapor deposition to reliably fabricate these materials. Low frequency Raman spectra and mapping of shear and layer breathing modes of MoSe2 are presented for the first time. We correlate the behavior of these modes with layer number in the materials. The usefulness of low frequency Raman mapping to probe the symmetry, quality, and monolayer presence in CVD grown 2D materials is emphasized. Raman map of maximum intensity position for low wavenumber shear and layer breathing modes of MoSe2.