Reducing intrinsic loss in superconducting resonators by surface treatment and deep etching of silicon substrates

2015/02/13 by A. Bruno, G. de Lange, S. Asaad +3 · 2 citations
Physics and Astronomy · #cond-mat.supr-con #cond-mat.mes-hall #quant-ph

paper · pdf · doi:10.1063/1.4919761

published as Appl. Phys. Lett. 106, 182601 (2015) · 4 pages, 3 figures, plus Supplemental Material (8 figures)

arxiv created 2015/02/13 · arxiv updated 2015/07/15

Abstract

We present microwave-frequency NbTiN resonators on silicon, systematically achieving internal quality factors above 1 M in the quantum regime. We use two techniques to reduce losses associated with two-level systems: an additional substrate surface treatment prior to NbTiN deposition to optimize the metal-substrate interface, and deep reactive-ion etching of the substrate to displace the substrate-vacuum interfaces away from high electric fields. The temperature and power dependence of resonator behavior indicate that two-level systems still contribute significantly to energy dissipation, suggesting that more interface optimization could further improve performance.

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