2006/03/22 by K. Hamaya, T. Taniyama, Y. Yamazaki
Materials Science · Physics and Astronomy · #Anisotropy #Magnetic anisotropy #Magnetic properties of thin films #Magnetization #Magnetization reversal #Magnetocrystalline anisotropy #Multiferroics and related materials #Remanence #Single domain #Stoner–Wohlfarth model #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.2194121
6 pages, 4 figures, to appear in J. Appl. Phys
arxiv created 2006/03/22 · openalex publication_date 2006/05/01 · arxiv updated 2015/06/25 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We study magnetization reversal processes of in-plane magnetized (Ga,Mn)As epilayers with different hole concentrations in out-of-plane magnetic fields using magnetotransport measurements. A clear difference in the magnetization process is found in two separate samples with hole concentrations of 1020 and 1021cm−3 as the magnetization rotates from the out-of-plane saturation to the in-plane remanence. Magnetization switching process from the in-plane remanence to the out-of-plane direction, on the other hand, shows no hole concentration dependence, where the switching process occurs via domain wall propagation. We show that the balance of ⟨100⟩ cubic magnetocrystalline anisotropy and uniaxial [110] anisotropy gives an understanding of the difference in the out-of-plane magnetization processes of (Ga,Mn)As epilayers.