2001/06/08 by Satoshi Koizumi, Kenji Watanabe, Masataka Hasegawa +1 · 3 citations
Materials Science · Engineering · #Diamond and Carbon-based Materials Research #Ion-surface interactions and analysis #Semiconductor materials and devices
paper · doi:10.1126/science.1060258
openalex publication_date 2001/06/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/23
We report the realization of an ultraviolet light-emitting diode with the use of a diamond pn junction. The pn junction was formed from a boron-doped p-type diamond layer and phosphorus-doped n-type diamond layer grown epitaxially on the 111 surface of single crystalline diamond. The pn junction exhibited good diode characteristics, and at forward bias of about 20 volts strong ultraviolet light emission at 235 nanometers was observed and was attributed to free exciton recombination.