2015/03/25 by N J Ghimire, N. J. Ghimire, Yongkang Luo +8 · 117 citations
Materials Science · Physics and Astronomy · #2D Materials and Applications #Charge-carrier density #Electronic band structure #Hall effect #Heusler alloys: electronic and magnetic properties #Magnetoresistance #Semimetal #Sign (mathematics) #Single crystal #Tetragonal crystal system #Topological Materials and Phenomena #Transverse plane #cond-mat.mtrl-sci
paper · pdf · doi:10.1088/0953-8984/27/15/152201
published in Journal of Physics Condensed Matter 27(15), 152201 (IOP Publishing) · accepted in J. Phys.: Condens. Matter
arxiv created 2015/03/25 · openalex publication_date 2015/03/27 · arxiv updated 2015/06/24 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We report transport measurement in zero and applied magnetic field on a single crystal of NbAs. Transverse and longitudinal magnetoresistance in the plane of this tetragonal structure does not saturate up to 9 T. In the transverse configuration (H ∥ c, I ⊥ c) it is 230,000% at 2 K. The Hall coefficient changes sign from hole-like at room temperature to electron-like below ∼150 K. The electron carrier density and mobility calculated at 2 K based on a single band approximation are 1.8 × 10(19) cm(-3) and 3.5 × 10(5) cm(2) Vs(-1), respectively. These values are similar to reported values for TaAs and NbP, and further emphasize that this class of noncentrosymmetric, transition-metal monopnictides is a promising family to explore the properties of Weyl semimetals and the consequences of their novel electronic structure.