2014/09/24 by A. Eich, Andreas Eich, Matteo Michiardi +15 · 32 citations
Chemistry · Materials Science · Physics and Astronomy · #Band gap #Bilayer #Bismuth #Chemistry #Condensed matter physics #Graphene research and applications #Materials science #Physics #Quantum and electron transport phenomena #Quantum mechanics #Quasiparticle #Scattering #Semimetal #Topological Materials and Phenomena #Topological insulator #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.90.155414
published in Physical Review B 90(15) (American Physical Society) · 11 pages, 5 figures
arxiv created 2014/09/24 · openalex publication_date 2014/10/08 · arxiv updated 2015/06/23 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
The band structure and intra- and interband scattering processes of the electrons at the surface of a bismuth bilayer on Bi2Se3 have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surface-localized spectral function calculated from first principles as the only input. Thereby, the origin of the quasiparticle interferences can be traced back to intraband scattering in the bismuth-bilayer valence band and Bi2Se3 conduction band and to interband scattering between the two-dimensional topological state and the bismuth-bilayer valence band. The investigation reveals that the bilayer band gap, which is predicted to host one-dimensional topological states at the edges of the bilayer, is pushed several hundred meV above the Fermi level. This result is rationalized by an electron transfer from the bilayer to Bi2Se3 which also leads to a two-dimensional electron state in the Bi2Se3 conduction band with a strong Rashba spin splitting, coexisting with the topological state and bilayer valence band.