2014/09/09 by Takehide Miyazaki, Yoshiyuki Miyamoto, Toshiharu Makino +7
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Atom (system on chip) #Chemical physics #Chemistry #Computer science #Condensed matter physics #Crystallography #Diamond #Diamond and Carbon-based Materials Research #Enhanced Data Rates for GSM Evolution #Lone pair #Materials science #Mechanism (biology) #Metal and Thin Film Mechanics #Molecular physics #Nanotechnology #Nitrogen #Nitrogen atom #Optoelectronics #Physics #Ring (chemistry) #Semiconductor materials and devices #Vacancy defect #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.4904988
5 pages, 4 figures
arxiv created 2014/09/09 · openalex publication_date 2014/12/29 · arxiv updated 2015/06/22 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Nitrogen-vacancy (NV) centers in diamond have attracted a great deal of attention because of their possible use in information processing and electromagnetic sensing technologies. We examined the atomistic generation mechanism for the NV defect aligned in the [111] direction of C(111) substrates. We found that N is incorporated in the C bilayers during the lateral growth arising from a sequence of kink propagation along the step edge down to [1¯1¯2]. As a result, the atomic configuration with the N-atom lone-pair pointing in the [111] direction is formed, which causes preferential alignment of NVs. Our model is consistent with recent experimental data for perfect NV alignment in C(111) substrates.