2014/06/09 by J. Debus, Т. С. Шамирзаев, T. S. Shamirzaev +6 · 2 citations
Engineering · Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Semiconductor materials and devices #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.90.125431
5 pages, 3 figures
arxiv created 2014/06/09 · openalex publication_date 2014/09/19 · arxiv updated 2015/06/19 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the \ensuremathΓ- and X-conduction-band valleys, for which their spins may be oriented by resonant spin-flip Raman scattering. This access is used to study the exciton spin-level structure by accurately measuring the anisotropic hole and isotropic electron g factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of \ensuremathΓ\text\ensuremath-X-valley mixing, as evidenced by both experiment and theory.