1995/05/23 by Michael Hilke, Michael HILKE, HILKE, Michael
Physics and Astronomy · #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat
paper · pdf · doi:10.48550/arxiv.cond-mat/9505109
4 pages in Revtex
arxiv created 1995/05/23 · arxiv updated 2009/11/30
The localization properties of a two-dimensional disordered electron gas in a strong external magnetic field are studied. The impurities are considered to be located on a square lattice with random amplitudes. The concentration of these impurities is low, i.e., the average distance between the impurities exceeds the magnetic length. For short-ranged impurity potentials we analytically obtain an exponent ν=2/3 for the divergence of the localization length at the lowest Landau level. The density of states is also calculated.