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Bottom-up Graphene Nanoribbon Field-Effect Transistors

2013/10/01 by Patrick B. Bennett, Zahra Pedramrazi, Ali Madani +6 · 1 citation
Physics and Astronomy · #cond-mat.mtrl-sci

paper · pdf · doi:10.1063/1.4855116

arxiv created 2013/10/01 · arxiv updated 2015/06/17

Abstract

Recently developed processes have enabled bottom-up chemical synthesis of graphene nanoribbons (GNRs) with precise atomic structure. These GNRs are ideal candidates for electronic devices because of their uniformity, extremely narrow width below 1 nm, atomically perfect edge structure, and desirable electronic properties. Here, we demonstrate nanoscale chemically synthesized GNR field-effect transistors, made possible by development of a new layer transfer process. We observe strong environmental sensitivity and unique transport behavior characteristic of sub-1nm width GNRs.

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