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On the Debye Effect in a Semiconductor and an Electrolyte

2004/03/31 by S. Piekarski, Piekarski, S.
Computer Science · Earth and Planetary Sciences · Engineering · Physics and Astronomy · #Advanced Mathematical Modeling in Engineering #Composite Material Mechanics #Geophysical and Geoelectrical Methods #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.cond-mat/0403758

15 pages, no figures

arxiv created 2004/04/02 · arxiv updated 2009/12/01

Abstract

It is shown that the standard expression for the diffusive flux in a semiconductor can be transformed to the flux from the Einstein-Smoluchowski equation after making use of the "Einstein identities". Later, it is possible to use a transformation introduced in: S. Piekarski: "On the modified Fick law and its potential applications" (J.Tech.Phys.,44,2,125-131,2003). In this formalism, it is possible to formulate simple models of a semiconductor and an electrolyte and to obtain the alternative description of a Debye effect (by the Debye effect we mean here the screening of the point particle potential). Final results are compared with the standard analysis.

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