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Doping a Correlated Band Insulator: A New Route to Half-Metallic Behavior

2013/07/10 by Arti Garg, H. R. Krishnamurthy, Mohit Randeria · 26 citations
Materials Science · Physics and Astronomy · #Condensed matter physics #Coulomb #Doping #Electron #Ferrimagnetism #Ferromagnetism #Hubbard model #Insulator (electricity) #Magnetic and transport properties of perovskites and related materials #Magnetic field #Magnetization #Materials science #Metal #Metal–insulator transition #Mott insulator #Optoelectronics #Paramagnetism #Physics #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Quantum mechanics #Spintronics #Superconductivity #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.112.106406

published in Physical Review Letters 112(10), 106406 (American Physical Society) · 5 pages, 7 figures

arxiv created 2013/07/10 · openalex publication_date 2014/03/12 · arxiv updated 2015/06/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a first order transition at a finite value UAF between a paramagnetic band insulator and an antiferomagnetic Mott insulator. Upon doping, the system exhibits half-metallic ferrimagnetism over a wide range of doping and interaction strengths on either side of UAF. Our results, based on dynamical mean field theory, suggest a new route to half metallicity, and will hopefully motivate searches for new materials for spintronics.

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