2015/06/01 by Dhiraj Prasai, Andrey R. Klots, A. K. M. Newaz +8
Engineering · Physics and Astronomy · #Absorption (acoustics) #Fluorescence #Förster resonance energy transfer #Materials science #Molybdenum disulfide #Monolayer #Nanotechnology #Near-Field Optical Microscopy #Optics #Optoelectronics #Photoluminescence #Physics #Plasmonic and Surface Plasmon Research #Quantum dot #Semiconductor #Strong Light-Matter Interactions #cond-mat.mes-hall
paper · pdf · doi:10.1021/acs.nanolett.5b00514
19 Pages, 11 figures. Main text and supporting information. Nano Letters, 2015, Article ASAP
openalex publication_date 2015/06/01 · arxiv created 2015/06/15 · arxiv updated 2015/06/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We investigate near-field energy transfer between chemically synthesized quantum dots (QDs) and two-dimensional semiconductors. We fabricate devices in which electrostatically gated semiconducting monolayer molybdenum disulfide (MoS2) is placed atop a homogeneous self-assembled layer of core-shell CdSSe QDs. We demonstrate efficient nonradiative Förster resonant energy transfer (FRET) from QDs into MoS2 and prove that modest gate-induced variation in the excitonic absorption of MoS2 leads to large (∼500%) changes in the FRET rate. This in turn allows for up to ∼75% electrical modulation of QD photoluminescence intensity. The hybrid QD/MoS2 devices operate within a small voltage range, allow for continuous modification of the QD photoluminescence intensity, and can be used for selective tuning of QDs emitting in the visible-IR range.