2012/06/19 by Prateek Mehrotra, Mehrotra, Prateek, Chris A. Mack +4
Engineering · Materials Science · #Advanced Surface Polishing Techniques #Advancements in Photolithography Techniques #FOS: Physical sciences #Integrated Circuits and Semiconductor Failure Analysis #Near-Field Optical Microscopy #Optical Coatings and Gratings #Optics (physics.optics) #Photonic and Optical Devices
paper · pdf · doi:10.48550/arxiv.1206.4148
openalex publication_date 2012/06/19 · openalex created_date 2022/08/30 · openalex updated_date 2026/07/28
Higher resolution demands for semiconductor lithography may be fulfilled by\nhigher numerical aperture (NA) systems. However, NAs more than the photoresist\nrefractive index (~1.7) cause surface confinement of the image. In this letter\nwe describe how evanescent wave coupling to effective gain medium surface\nstates beneath the imaging layer can counter this problem. At \λ=193 nm\na layer of sapphire on SiO2 counters image decay by an effective-gain-medium\nresonance phenomena allowing evanescent interferometric lithography to create\nhigh aspect ratio structures at NAs of 1.85 (26-nm) and beyond.\n