2008/08/28 by Takeshi Ohgaki, Naoki Ohashi, Shigeaki Sugimura +4 · 1 citation
Engineering · Materials Science · #Electronic and Structural Properties of Oxides #Magnetic Field Sensors Techniques #ZnO doping and properties
paper · doi:10.1557/jmr.2008.0300
openalex publication_date 2008/08/28 · crossref created 2008/08/28 · crossref issued 2008/09/01 · crossref published 2008/09/01 · crossref published-print 2008/09/01 · crossref published-online 2011/01/31 · crossref deposited 2021/02/24 · openalex created_date 2025/10/10 · crossref indexed 2026/05/08 · openalex updated_date 2026/07/23
We report on the effect of sample non-uniformity on the results of Hall-effect measurements. False positive Hall coefficients were obtained from an evidently n -type ZnO single crystal, although four electrodes with low contact resistance were made and the Van der Pauw parameter for this electrode configuration was close to 1.00. Further position-sensitive characterization revealed that the false positive Hall coefficient was due to non-uniform electrical properties of the sample. To demonstrate a false positive sign of the Hall coefficient due to sample non-uniformity, we devised a model structure made from evident n -type ZnO thin film and successfully reproduced a false positive Hall coefficient from n -type ZnO.