Behavior of hydrogen in high dielectric constant oxide gate insulators

2003/09/08 by P. W. Peacock, John Robertson · 1 citation
Engineering · Materials Science · #Semiconductor materials and devices #Electronic and Structural Properties of Oxides #Ferroelectric and Negative Capacitance Devices

paper · doi:10.1063/1.1609245

openalex publication_date 2003/09/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/15

Abstract

Interstitial hydrogen is calculated to act as a shallow donor in the candidate high dielectric constant (k) gate oxides ZrO2, HfO2, La2O3, Y2O3, TiO2, SrTiO3, and LaAlO3 but is deep in the oxides SiO2, Al2O3, ZrSiO4, HfSiO4, and SrZrO3. This may account for the change of sign of fixed charge in oxides, from negative in Al2O3 to positive in HfO2.

Citations

• High-κ gate dielectrics: Current status and materials properties considerations
• Iterative minimization techniques forab initiototal-energy calculations: molecular dynamics and conjugate gradients

Cited by

• Hydrogen [wikipedia]