Spin transport in germanium at room temperature

2010/10/18 by Chengchao Shen, T. Trypiniotis, Kiyoung Lee +14 · 2 citations
Physics and Astronomy · Engineering · #Quantum and electron transport phenomena #Semiconductor materials and devices #Semiconductor materials and interfaces

paper · pdf · doi:10.1063/1.3505337

openalex publication_date 2010/10/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/19

Abstract

Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent conductance at the Ni/Ge Schottky interface. We demonstrate electron spin transport and electrical extraction from the Ge layer at room temperature.

Citations

• Electrical detection of spin transport in lateral ferromagnet–semiconductor devices
• Electronic measurement and control of spin transport in silicon
• Spintronics: Fundamentals and applications

Cited by

• Electron spin coherence of shallow donors in natural and isotopically enriched germanium
• Germanium [wikipedia]