2012/08/25 by G. Zhao, Y. Zhang, D. G. Deppe +2
Engineering · Physics and Astronomy · #Epitaxy #Gallium arsenide #Heterojunction #Laser #Laser linewidth #Lasing threshold #Photonic and Optical Devices #Quantum dot laser #Quantum well #Semiconductor #Semiconductor Lasers and Optical Devices #Semiconductor Quantum Structures and Devices #Semiconductor laser theory #cond-mat.mtrl-sci #physics.optics #quant-ph
paper · pdf · doi:10.1063/1.4750062
arxiv created 2012/08/25 · openalex publication_date 2012/09/03 · arxiv updated 2015/06/11 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We report a buried heterostructure vertical-cavity surface-emitting laser fabricated by epitaxial regrowth over an InGaAs quantum well gain medium. The regrowth technique enables microscale lateral confinement that preserves a high cavity quality factor (loaded Q≈4000) and eliminates parasitic charging effects found in existing approaches. Under optimal spectral overlap between gain medium and cavity mode (achieved here at T = 40 K), lasing was obtained with an incident optical power as low as Pth=10 mW (λp=808 nm). The laser linewidth was found to be ≈3 GHz at Pp≈5 Pth.