2012/08/11 by A. Navarro-Quezada, T. Devillers, Tian Li +1 · 17 citations
Materials Science · Physics and Astronomy · #Antiferromagnetism #Epitaxy #Ferromagnetism #GaN-based semiconductor devices and materials #Magnetic properties of thin films #Magnetic semiconductor #Nanocrystal #Phase (matter) #Planar #Transmission electron microscopy #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.4747809
published in Applied Physics Letters 101(8), 081911 (American Institute of Physics) · 5 pages, 3 figures
arxiv created 2012/08/11 · openalex publication_date 2012/08/20 · arxiv updated 2015/06/11 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Single planar arrays of Ga(x)Fe(4-x)N magnetic nanocrystals embedded in GaN have been fabricated in an epitaxial process. The phase of the nanocrystals and their epitaxial relationship with the host matrix are studied via high-resolution transmission electron microscopy and high-resolution x-ray diffraction. By changing the growth parameters and mode, the crystallographic phase and chemical composition of the nanocrystals can be varied on demand. In view of the different magnetic properties of the various phases, applications in room-temperature ferromagnetic as well as antiferromagnetic spintronic devices are envisaged.