2012/07/25 by M. Azeem, B. J. Ruck, Binh Do Le +6
Engineering · Materials Science · Physics and Astronomy · #Absorption (acoustics) #Band gap #Boron and Carbon Nanomaterials Research #Crystallite #Dielectric #Doping #GaN-based semiconductor devices and materials #Infrared #Metal and Thin Film Mechanics #Phonon #Refractive index #Semiconductor #cond-mat.mtrl-sci #cond-mat.other #physics.optics
paper · pdf · doi:10.1063/1.4807647
arxiv created 2012/07/25 · openalex publication_date 2013/05/28 · arxiv updated 2015/06/05 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We report measurements of the optical response of polycrystalline DyN thin films. The frequency-dependent complex refractive index in the near IR-visible-near UV was determined by fitting reflection/transmission spectra. In conjunction with resistivity measurements, these identify DyN as a semiconductor with an optical energy gap of 1.2 eV. When doped with nitrogen vacancies it shows free carrier absorption and a blue-shifted gap associated with the Moss-Burstein effect. The refractive index of 2.0 ± 0.1 depends only weakly on energy. Far infrared reflectivity data show a polar phonon of frequency 280 cm−1 and a dielectric strength of Δε=20.