2016/11/14 by Martin Faccinelli, Faccinelli, Martin, Stefan Kirnstoetter +11
Engineering · Physics and Astronomy · #Accelerator Physics (physics.acc-ph) #Chemical Physics (physics.chem-ph) #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and interfaces #Silicon and Solar Cell Technologies #Thin-Film Transistor Technologies
paper · pdf · doi:10.48550/arxiv.1611.04312
openalex publication_date 2016/11/14 · openalex created_date 2022/10/01 · openalex updated_date 2026/07/28
The reported diffusion constants for hydrogen in silicon vary over six orders\nof magnitude. This spread in measured values is caused by the different\nconcentrations of defects in the silicon that has been studied. Hydrogen\ndiffusion is slowed down as it interacts with impurities. By changing the\nmaterial properties such as the crystallinity, doping type and impurity\nconcentrations, the diffusivity of hydrogen can be changed by several orders of\nmagnitude. In this study the influence of the hydrogen concentration on the\ntemperature dependence of the diffusion in high energy proton implanted silicon\nis investigated. We show that the Arrhenius parameters, which describe this\ntemperature dependence decrease with increasing hydrogen concentration. We\npropose a model where the relevant defects that mediate hydrogen diffusion\nbecome saturated with hydrogen at high concentrations. When the defects that\nprovide hydrogen with the lowest energy positions in the lattice are saturated,\nhydrogen resides at energetically less favorable positions and this increases\nthe diffusion of hydrogen through the crystal. Furthermore, we present a survey\nof different studies on the diffusion of hydrogen. We observed a correlation of\nthe Arrhenius parameters calculated in those studies, leading to a modification\nof the Arrhenius equation for the diffusion of hydrogen in silicon.\n