2012/07/12 by David Jimenez · 1 citation
Physics and Astronomy · #cond-mat.mes-hall
paper · pdf · doi:10.1063/1.4770313
10 pages, 3 figures
arxiv created 2012/07/12 · arxiv updated 2015/06/05
A physics-based model for the surface potential and drain current for monolayer transition metal dichalcogenide (TMD) field-effect transistor (FET) is presented. Taking into account the 2D density-of-states of the atomic layer thick TMD and its impact on the quantum capacitance, a model for the surface potential is presented. Next, considering a drift-diffusion mechanism for the carrier transport along the monolayer TMD, an explicit expression for the drain current has been derived. The model has been benchmarked with a measured prototype transistor. Based on the proposed model, the device design window targeting low-power applications is discussed.