2012/06/25 by F. V. Porubaev, L. E. Golub · 2 citations
Physics and Astronomy · #Anderson localization #Anisotropy #Condensed matter physics #Conductivity #Dephasing #Heterojunction #Impurity #Magnetic field #Magnetoresistance #Physics #Quantum and electron transport phenomena #Quantum mechanics #Relaxation (psychology) #Scattering #Semiconductor Quantum Structures and Devices #Topological Materials and Phenomena #Wave vector #Weak localization #cond-mat.dis-nn #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.87.045306
5 pages, 4 figures
arxiv created 2012/06/25 · openalex publication_date 2013/01/09 · arxiv updated 2015/06/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Theory of weak localization is developed for two-dimensional holes in semiconductor heterostructures. Ballistic regime of weak localization where the backscattering occurs from few impurities is studied with account for anisotropic momentum scattering of holes. The transition from weak localization to antilocalization is demonstrated for long dephasing times. For stronger dephasing the conductivity correction is negative at all hole densities due to nonmonotonous dependence of the spin relaxation time on the hole wavevector. The anomalous temperature dependent correction to the conductivity is calculated. We show that the temperature dependence of the conductivity is nonmonotonous at moderate hole densities.