2019/06/26 by Romakanta Bhattarai, Bhattarai, Romakanta, Xiao Shen +1
Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.1906.11225
openalex publication_date 2019/06/26 · openalex created_date 2019/07/12 · openalex updated_date 2026/07/28
Silicon telluride (Si2Te3) is a silicon-based 2D chalcogenide with potential applications in optoelectronics. It has a unique crystal structure where Si atoms form Si-Si dimers to occupy the "metal" sites. In this paper, we report an ab initio computational study of its optical dielectric properties using the GW approximation and the Bethe-Salpeter equation (BSE). Strong optical anisotropy is discovered. The imaginary part of the dielectric constant in the direction parallel to the Si-Si dimers is found to be much lower than that perpendicular to the dimers. We show this effect originates from the particular compositions of the wavefunctions in the valence and conduction bands. BSE calculations reduce GW quasiparticle band gap by 0.3 eV in bulk and 0.6 eV in monolayer, indicating a large excitonic effect in Si2Te3. Furthermore, including electron-hole interaction in bulk calculations significantly reduces the imaginary part of the dielectric constant in the out-of-plane direction, suggesting strong interlayer exciton effect in Si2Te3 multilayers.