2019/07/25 by Serena Rollo, Rollo, Serena, Dipti Rani +5
Chemical Engineering · Physics and Astronomy · #Analytical Chemistry and Sensors #Applied Physics (physics.app-ph) #FOS: Physical sciences #Force Microscopy Techniques and Applications #Surface and Thin Film Phenomena
paper · pdf · doi:10.48550/arxiv.1907.11022
openalex publication_date 2019/07/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised\nby a high height to width aspect ratio with high-k dielectric materials to\nstudy the optimized design for chemical-FETs to provide higher transconductance\n(and thus a better signal to noise ratio), increased dynamic range and chemical\nstability. We used pH sensing to verify the design. We explored the sensitivity\nand response linearity of silicon dioxide, alumina and hafnium oxide as\ndielectric materials sensing pH, and compared their chemical stability in\ndifferent acids. The high aspect ratio fin geometry of the sensor provides high\ncurrents, as well as a planar conduction channel more reliable than traditional\nsilicon nanowires. The hafnium oxide Fin-FET configuration performed the best\ndelivering the most linear response both for the output and transfer\ncharacteristics providing a wider dynamic range. Hafnium oxide also showed the\nbest chemical stability. Thus, we believe that the developed high aspect ratio\nFin-FETs/high-k dielectric system can offer the best compromise of performance\nof FET-based sensors.\n