2015/01/08 by Feng Pan, Yangyang Wang, Kaili Jiang +8 · 1 citation
Physics and Astronomy · #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1038/srep09075
arxiv created 2015/01/08 · arxiv updated 2015/06/03
Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal that a band gap is opened in silicene nanomesh (SNM) when the width W of the wall between the neighboring holes is even. The size of the band gap increases with the reduced W and has a simple relation with the ratio of the removed Si atom and the total Si atom numbers of silicene. Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.