Single-shot laser-pulse-induced magnetization reversal in CoFeB/MgO-based magnetic tunnel junctions

2025/10/29 by Junta Igarashi, Igarashi, Junta, Sébastien Geiskopf +21
#cond-mat.mes-hall #cond-mat.mtrl-sci #physics.optics

paper · pdf · doi:10.48550/arxiv.2510.25102

Abstract

We demonstrate single-shot laser-pulse-induced magnetization reversal in rare-earth-free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin-transfer torque magnetic random-access memory (STT-MRAM). By tuning the Ru capping layer thickness, we modify the laser energy absorption profile and observe magnetization reversal from the parallel (P) to antiparallel (AP) state, with switching observed for t_Ru ≥ 2.0 nm. Furthermore, we detect magnetization reversal in a micro-scale MTJ device via the tunnel magnetoresistance (TMR) effect. Our findings suggest that ultrafast spin transport, dipolar interactions, or a combination of both may contribute to the switching process, although the precise mechanism remains to be clarified. This work represents a significant step toward integrating ultrafast optical control with MTJ technology.

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