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Magnetic interaction at an interface between manganite and other transition metal oxides

2010/07/27 by Satoshi Okamoto · 39 citations
Chemistry · Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Atomic orbital #Chemistry #Colossal magnetoresistance #Condensed matter physics #Crystallography #Electron #Electronic and Structural Properties of Oxides #Ferromagnetism #Heterojunction #Magnetic and transport properties of perovskites and related materials #Magnetic field #Magnetoresistance #Manganite #Materials science #Perovskite (structure) #Physics #Quantum mechanics #Transition metal #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.82.024427

published in Physical Review B 82(2) (American Physical Society) · 7pages, 4 figures, 1 table

arxiv created 2010/07/27 · openalex publication_date 2010/07/27 · arxiv updated 2015/05/19 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

A general consideration is presented for the magnetic interaction at an interface between a perovskite manganite and other transition metal oxides. The latter is specified by the electron number n in the d_3z2\ensuremath-r2 level as (d_3z2\ensuremath-r2)n. Based on the molecular orbitals formed at the interface and the generalized Hund's rule, the sign of the magnetic interaction is rather uniquely determined. The exception is when the d_3z2\ensuremath-r2 orbital is stabilized in the interfacial manganite layer neighboring to a (d_3z2\ensuremath-r2)1 or (d_3z2\ensuremath-r2)2 system. In this case, the magnetic interaction is sensitive to the occupancy of the Mn d_3z2\ensuremath-r2 orbital. It is also shown that the magnetic interaction between the interfacial Mn layer and the bulk region can be changed. Manganite-based heterostructures thus show a rich magnetic behavior. We also present how to generalize the argument including t2g orbitals.

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