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Chemical potential jump between the hole-doped and electron-doped sides of ambipolar high-Tccuprate superconductors

2009/12/31 by M. Ikeda, Masaki Ikeda, M. Takizawa +4 · 1 citation
Materials Science · Physics and Astronomy · #Advanced Condensed Matter Physics #Ambipolar diffusion #Atomic physics #Condensed matter physics #Doping #Electron #Jump #Magnetic and transport properties of perovskites and related materials #Materials science #Nuclear magnetic resonance #Physics #Physics of Superconductivity and Magnetism #Quantum mechanics #X-ray photoelectron spectroscopy #cond-mat.str-el #cond-mat.supr-con

paper · pdf · doi:10.1103/physrevb.82.020503

published as Phys. Rev. B 82, 020503(R) (2010) · 4 pages, 3 figures

arxiv created 2009/12/31 · openalex publication_date 2010/07/09 · arxiv updated 2015/05/14 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

In order to study an intrinsic chemical potential jump between the hole-doped and electron-doped high-Tc superconductors, we have performed core-level x-ray photoemission spectroscopy measurements of Y0.38La0.62Ba1.74La0.26Cu3Oy (YLBLCO), into which one can dope both holes and electrons with maintaining the same crystal structure. Unlike the case between the hole-doped system La_2\ensuremath-xSrxCuO4 and the electron-doped system Nd_2\ensuremath-xCexCuO4, we have estimated the true chemical potential jump between the hole-doped and electron-doped YLBLCO to be \ensuremath∼0.8 eV, which is much smaller than the optical gaps of 1.4--1.7 eV reported for the parent insulating compounds. We attribute the reduced jump to the indirect nature of the charge-excitation gap as well as to the polaronic nature of the doped carriers.

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