2009/12/09 by I. Galanakis, I. Lekkas, Ioannis Lekkas
Materials Science · Physics and Astronomy · #Atom (system on chip) #Condensed matter physics #Electronic structure #Epitaxy #Ferromagnetism #Heusler alloys: electronic and magnetic properties #Impurity #Layer (electronics) #Materials science #Metal #Metallurgy #Nanotechnology #Optoelectronics #Physics #Semiconductor #Superlattice #Surface and Thin Film Phenomena #Void (composites) #ZnO doping and properties #cond-mat.mtrl-sci
paper · pdf · doi:10.1016/j.jmmm.2010.02.058
published as Journal of Magnetism and Magnetic Materials 322, 2471 (2010)
arxiv created 2009/12/09 · openalex publication_date 2010/03/09 · arxiv updated 2015/05/14 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We present an extended study of single impurity atoms at the interface between the half-metallic ferromagnetic zinc-blende CrAs compound and the zinc-blende binary InAs and CdSe semiconductors in the form of very thin multilayers. Contrary to the case of impurities in the perfect bulk CrAs studied in [I. Galanakis and S.G. Pouliasis, J. Magn. Magn. Mat. 321 (2009) 1084] defects at the interfaces do not alter in general the half-metallic character of the perfect systems. The only exception are Void impurities at Cr or In(Cd) sites which lead, due to the lower-dimensionality of the interfaces with respect to the bulk CrAs, to a shift of the p bands of the nearest neighboring As(Se) atom to higher energies and thus to the loss of the half-metallicity. But Void impurities are Schottky-type and should exhibit high formation energies and thus we expect the interfaces in the case of thin multilayers to exhibit a robust half-metallic character.