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Evidence for Developing Fractional Quantum Hall States at Even Denominator1/2and1/4Fillings in Asymmetric Wide Quantum Wells

2009/09/11 by J. Shabani, Javad Shabani, T. Gokmen +4 · 3 citations
Engineering · Mathematics · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Charge (physics) #Combinatorics #Condensed matter physics #Electron #Fractional quantum Hall effect #Mathematics #Pfaffian #Physics #Physics of Superconductivity and Magnetism #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Quantum spin Hall effect #Wave function #cond-mat.mes-hall #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.103.256802

published as Phys. Rev. Lett. 103, 256802 (2009) · submitted for publication

arxiv created 2009/09/11 · openalex publication_date 2009/12/17 · arxiv updated 2015/05/14 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We report the observation of developing fractional quantum Hall states at Landau level filling factors nu = 1/2 and 1/4 in electron systems confined to wide GaAs quantum wells with significantly asymmetric charge distributions. The very large electric subband separation and the highly asymmetric charge distribution at which we observe these quantum Hall states, together with the fact that they disappear when the charge distribution is made symmetric, suggest that these are one-component states, possibly described by the Moore-Read Pfaffian wave function.

Citations

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