2009/07/20 by G. Liu, Guangchen Liu, W. Stillman +9 · 150 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Acoustics #Carbon Nanotubes in Composites #Computer science #Double layer (biology) #Electrical engineering #Engineering #Fullerene Chemistry and Applications #Graphene #Graphene research and applications #Infrasound #Layer (electronics) #Materials science #Nanotechnology #Noise (video) #Optoelectronics #Physics #Transistor #Voltage #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.3180707
published in Applied Physics Letters 95(3) (American Institute of Physics) · 9 pages, 4 figures
openalex publication_date 2009/07/20 · arxiv created 2009/08/23 · arxiv updated 2015/05/14 · openalex created_date 2020/11/23 · openalex updated_date 2026/07/22
The authors report the results of an experimental investigation of the low-frequency noise in the double-gate graphene transistors. The back-gate graphene devices were modified via addition of the top gate separated by ∼20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise levels with the normalized noise spectral density close to 1/f (f is the frequency) and Hooge parameter αH≈2×10−3. The analysis of noise spectral density dependence on the top and bottom gate biases helped to elucidate the noise sources in these devices. The obtained results are important for graphene electronic and sensor applications.