2009/07/21 by M. Schäfers, V. Drewello, G. Reiss +6 · 1 citation
Physics and Astronomy · #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.3272268
arxiv created 2009/07/21 · arxiv updated 2015/05/13
Magnetic tunnel junctions for spin-transfer torque switching were prepared to investigate the dielectric breakdown. The breakdown occurs typically at voltages not much higher than the switching voltages, a bottleneck for the implementation of spin-transfer torque Magnetic Random Access Memory. Intact and broken tunnel junctions are characterized by transport measurements and then prepared for transmission electron microscopy and energy dispersive x-ray spectrometry by focussed ion beam. The comparison to our previous model of the electric breakdown for thicker MgO tunnel barriers reveals significant differences arising from the high current densities.