2009/06/04 by A. Sharma, N. Theodoropoulou, Shuai Wang +4
Materials Science · Physics and Astronomy · #Analytical Chemistry (journal) #Anisotropy #Copper Interconnects and Reliability #Interface (matter) #Semiconductor materials and interfaces #Sensitivity (control systems) #Surface and Thin Film Phenomena #Value (mathematics) #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.3155856
3 pages, 2 figures, 1 table. In Press: Journal of Applied Physics
arxiv created 2009/06/04 · openalex publication_date 2009/06/15 · arxiv updated 2015/05/13 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
We have measured a Ag/Al interface specific resistance, 2ARAg/Al(111)=1.4 fΩ m2, that is twice that predicted for a perfect interface, 50% larger than for a 2 ML 50%–50% alloy, and even larger than our newly predicted 1.3 fΩ m2 for a 4 ML 50%–50% alloy. Such a large value of 2ARAg/Al(111) confirms a predicted sensitivity to interfacial disorder and suggests an interface ≥4 ML thick. From our calculations, a predicted anisotropy ratio, 2ARAg/Al(001)/2ARAg/Al(111), of more than 4 for a perfect interface should be reduced to less than 2 for a 4 ML interface, making it harder to detect any such anisotropy.